The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Dec. 14, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Toshihiko Ohda, Yokkaichi Mie, JP;

Yuusuke Takano, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/20 (2026.01); H10W 70/685 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01); H10W 74/15 (2026.01); H10W 90/00 (2026.01); H10W 90/24 (2026.01);
U.S. Cl.
CPC ...
H10W 42/20 (2026.01); H10W 70/685 (2026.01); H10W 74/01 (2026.01); H10W 74/117 (2026.01); H10W 74/121 (2026.01); H10W 90/00 (2026.01); H10W 74/15 (2026.01); H10W 90/24 (2026.01); H10W 90/724 (2026.01); H10W 90/734 (2026.01);
Abstract

A semiconductor device includes a wiring board having a first surface and a ground electrode exposed to the first surface, a stacked body provided above the first surface and having a chip structure body and a first resin layer that seals the chip structure body, a second resin layer that seals the stacked body, a third resin layer provided between the wiring board and the stacked body, and a first conductive shield layer provided between the first resin layer and the first surface and between the first resin layer and the second resin layer, and being in contact with the ground electrode. The first conductive shield layer is in contact with the side surface of the first resin layer. When looking the ground electrode from a direction perpendicular to the first surface, the ground electrode is provided outside of the first resin layer.


Find Patent Forward Citations

Ohda, Toshihiko. (2026). Semiconductor device and method of producing the same (U.S. Patent No. 12672548). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672548

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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