The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Mar. 13, 2023
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Aya Murayoshi, Yokohama Kanagawa, JP;

Kazushiro Nomura, Kawasaki Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 42/00 (2026.01); H10D 30/66 (2025.01); H10W 20/00 (2026.01); H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10W 42/121 (2026.01); H10D 30/668 (2025.01); H10W 20/0698 (2026.01); H10W 20/484 (2026.01);
Abstract

A semiconductor device includes a first conductive layer, a semiconductor layer, first to second control electrodes, and first to second electrode pads. The first conductive layer includes first to second conductive regions. The second conductive region is thinner than the first conductive region. The semiconductor layer is located on the first conductive layer, and includes first to fifth semiconductor regions. The first control electrode faces the first, second, and third semiconductor regions via a first insulating film. The second control electrode faces the first, fourth, and fifth semiconductor regions via a second insulating film. The first electrode pad is located above the semiconductor layer and electrically connected with the third semiconductor region. The second electrode pad is located above the semiconductor layer and electrically connected with the fifth semiconductor region. At least a portion of the first conductive region is positioned below the first and second electrode pads.


Find Patent Forward Citations

Murayoshi, Aya. (2026). Semiconductor device and method for manufacturing (U.S. Patent No. 12672546). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672546

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…