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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12672476 B1

PDFFull Text
Date of Patent:
Jun. 30, 2026

Filed:

Sep. 29, 2021

Opto-electronic device with nanoparticle deposited layers

Applicant:

Oti Lumionics Inc., Mississauga, CA;

Inventors:

Michael Helander, Mississauga, CA;

Zhibin Wang, Mississauga, CA;

Yi-Lu Chang, Mississauga, CA;

Qi Wang, Mississauga, CA;

Assignee:

OTI Lumionics Inc., Mississauga, CA;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H10K 71/10 (2023.01); H10K 30/10 (2023.01); H10K 50/115 (2023.01); H10K 50/16 (2023.01); H10K 50/805 (2023.01); H10K 50/842 (2023.01); H10K 50/86 (2023.01); H10K 59/00 (2023.01); H10K 59/10 (2023.01); H10K 59/12 (2023.01); H10K 59/122 (2023.01); H10K 59/17 (2023.01); H10K 59/35 (2023.01); H10K 59/80 (2023.01); H10K 59/90 (2023.01); H10K 71/00 (2023.01); H10K 71/16 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 71/191 (2023.02); H10K 59/879 (2023.02); H10K 71/621 (2023.02); H10K 59/12 (2023.02); H10K 59/17 (2023.02); H10K 59/80521 (2023.02); H10K 59/80522 (2023.02);
Abstract

A layered semiconductor device comprises at least one particle structure disposed on an underlying layer that comprises a particle material in contact with a contact material selected from: a seed material, a co-deposited dielectric material and/or at least one patterning material. A method for controllably selecting formation of the at least one particle structure on an underlying layer during manufacture of the device comprises depositing at least one layer, including the underlying layer, and exposing its surface to a flux of a particle material such that it comes into contact with the contact material, and coalesces to dispose the at least one particle structure on the underlying layer.

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