The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Sep. 01, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Feifei Fang, Suwon-si, KR;

Sungyoung Yun, Suwon-si, KR;

Chul Joon Heo, Suwon-si, KR;

Hyeong-Ju Kim, Suwon-si, KR;

Kyung Bae Park, Suwon-si, KR;

Hwijoung Seo, Suwon-si, KR;

Tae Jin Choi, Suwon-si, KR;

Assignee:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 39/34 (2026.01); G06V 40/13 (2022.01); H10K 59/35 (2023.01); H10K 101/40 (2023.01);
U.S. Cl.
CPC ...
H10K 39/34 (2023.02); G06V 40/1318 (2022.01); H10K 59/353 (2023.02); H10K 2101/40 (2023.02);
Abstract

A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.


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