The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Jul. 16, 2020
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Corentin Le Maoult, Grenoble Cedex, FR;

David Vaufrey, Grenoble Cedex, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 29/14 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/822 (2025.01);
U.S. Cl.
CPC ...
H10H 29/142 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/822 (2025.01);
Abstract

A light-emitting diode manufacturing method, including the successive steps of: a) forming an active layer including a stack of multiple quantum wells, each quantum well including a layer made of a semiconductor alloy; b) forming a trench for singularizing the diode, the trench crossing the active layer; and c) applying to the sides of the active layer, at the level of the lateral walls of the trench, a chemical treatment capable of etching a first component of the semiconductor alloy selectively over at least another component of the semiconductor alloy, wherein the bandgap width of the semiconductor alloy is a function of the concentration of the first component in the alloy.


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