The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Apr. 28, 2022
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventors:
Joosung Kim, Seongnam-si, KR;
Younghwan Park, Seongnam-si, KR;
Dongchul Shin, Suwon-si, KR;
Junhee Choi, Seongnam-si, KR;
Nakhyun Kim, Yongin-si, KR;
Junghun Park, Yongin-si, KR;
Eunsung Lee, Seoul, KR;
Joohun Han, Hwaseong-si, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/815 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/84 (2025.01); H10W 70/60 (2026.01); H10W 90/00 (2026.01); H10W 90/22 (2026.01);
U.S. Cl.
CPC ...
H10H 20/815 (2025.01); H10H 20/01 (2025.01); H10H 20/01335 (2025.01); H10H 20/84 (2025.01); H10W 90/00 (2026.01); H10H 20/825 (2025.01); H10W 70/60 (2026.01); H10W 90/22 (2026.01);
Abstract
A light emitting device may be a bar-type light emitting device and include a n-GaN semiconductor layer, a p-GaN semiconductor layer spaced apart from the n-GaN semiconductor layer, an active layer arranged between the n-GaN semiconductor layer and the p-GaN semiconductor layer, and a strain relaxing layer including indium clusters and voids.