The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Jun. 27, 2024
Trina Solar Co., Ltd., Changzhou, CN;
Chengfa Liu, Changzhou, CN;
Dongyun Lv, Changzhou, CN;
Daming Chen, Changzhou, CN;
Hong Chen, Changzhou, CN;
Zigang Wang, Changzhou, CN;
Wei Liu, Changzhou, CN;
TRINA SOLAR CO., LTD., Changzhou, CN;
Abstract
A preparation method of a passivated contact structure includes: forming a tunneling layer on a semiconductor substrate; forming an intrinsic semiconductor layer on the tunneling layer; forming a doped layer containing a dopant on the intrinsic semiconductor layer, and performing an activation treatment on the doped layer to diffuse the dopant in the doped layer into the intrinsic semiconductor layer to form a doped semiconductor layer. The tunneling layer and the doped semiconductor layer form the passivated contact structure.