The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Apr. 10, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taesung Lee, Hwaseong-si, KR;

Dongmin Keum, Daegu, KR;

Bumsuk Kim, Hwaseong-si, KR;

Jinho Kim, Seoul, KR;

Junsung Park, Hwaseong-si, KR;

Kwanghee Lee, Hwaseong-si, KR;

Dongkyu Lee, Suwon-si, KR;

Yunki Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H04N 23/67 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8063 (2025.01); H04N 23/672 (2023.01); H10F 39/18 (2025.01); H10F 39/8053 (2025.01);
Abstract

An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.


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