The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Mar. 19, 2021
Applicant:
Adaps Photonics Inc., San Jose, CA (US);
Inventors:
Ching-Ying Lu, San Jose, CA (US);
Yangsen Kang, San Jose, CA (US);
Shuang Li, San Jose, CA (US);
Kai Zang, San Jose, CA (US);
Assignee:
Adaps Photonics Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); G01J 1/44 (2006.01); H10F 30/225 (2025.01); H10F 39/12 (2025.01); H10F 77/30 (2025.01); H10F 77/70 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8033 (2025.01); G01J 1/44 (2013.01); H10F 39/026 (2025.01); H10F 39/199 (2025.01); H10F 39/805 (2025.01); H10F 39/807 (2025.01); G01J 2001/4466 (2013.01); H10F 30/225 (2025.01); H10F 77/306 (2025.01); H10F 77/703 (2025.01);
Abstract
The present invention relates generally to sensing devices. In a specific embodiment, the present invention provides a SPAD pixel device that include a p-type material that partially encloses an n-type material. The junction between the p-type material and the n-type material is three dimensional and includes both a horizontal area and lateral areas. The SPAD pixel device also includes isolation structures that separate the SPAD pixel device from others. There are other embodiments as well.