The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Oct. 29, 2021
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Suguru Saito, Kanagawa, JP;
Nobutoshi Fujii, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
Provided are a semiconductor device capable of lowering the temperature of the entire joining process to room temperature, a method for manufacturing a semiconductor device, and an electronic device. The semiconductor device includes: a first insulating film; a plurality of first joining electrodes formed on a surface of the first insulating film; a second insulating film; a plurality of second joining electrodes formed on a surface of the second insulating film; and a metal film covering an entire surface of a joining surface including the first insulating film and the plurality of first joining electrodes and an entire surface of a joining surface including the second insulating film and the plurality of second joining electrodes. The first insulating film includes a first dug portion that is formed between at least some joining electrodes of the plurality of first joining electrodes and separating the metal film between the joining electrodes. The second insulating film includes a second dug portion formed between at least some joining electrodes of the plurality of second joining electrodes and separating the metal film between the joining electrodes.