The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Aug. 26, 2022
Applicant:

Georgia Tech Research Corporation, Atlanta, GA (US);

Inventors:

Patrick Stephen Goley, Atlanta, GA (US);

John D. Cressler, Atlanta, GA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 30/222 (2025.01); H10F 39/10 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 30/222 (2025.01); H10F 39/103 (2025.01); H10F 71/121 (2025.01); H10F 77/122 (2025.01); H10F 77/148 (2025.01);
Abstract

An exemplary embodiment of the present disclosure provides an avalanche photodiode (APD), comprising: a p-doped substrate; a first n-doped region; an n-doped epitaxial region; a plurality of n-doped wells; and a first p-doped region. The first n-doped region can be positioned above at least a portion of the p-doped substrate. The n-doped epitaxial region can be positioned above at least a portion of the first n-doped region. The plurality of n-doped wells can be positioned within the first n-doped epitaxial region. The first p-doped region can be positioned above the n-doped epitaxial region and the plurality of n-doped wells.


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