The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Mar. 22, 2023
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Cheng-Yu Wang, Chiayi City, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor layer, a deep trench isolation structure, a shallow trench isolation structure, a first resistance layer, a second resistance layer, a first heavily doped region, a second heavily doped region, and a conductive line. The deep trench isolation structure separates the semiconductor device into a plurality of units including the first and second units. The shallow trench isolation structure is disposed on a portion of the semiconductor layer in one of the plurality of units. The first and second resistance layers are disposed on the shallow trench isolation structure in the first and second units respectively. The first and second heavily doped regions are embedded in the shallow trench isolation structure and in physical contact with the semiconductor layer in the first and second units respectively. The conductive line electrically connects the first and second resistance layers and the second heavily doped region.