The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Jun. 13, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Junggun You, Suwon-si, KR;
Gigwan Park, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes first and second active fins on first and second regions of a substrate, an isolation pattern on a boundary between the first and second regions and portions of the first and second regions adjacent thereto and separating the first and second active fins, a first gate structure on the first active fin and the isolation pattern on the first region, a second gate structure on the second active fin and the isolation pattern on the second region, a first source/drain layer on the first active fin adjacent to the first gate structure, and a second source/drain layer on the second active fin adjacent to the second gate structure. A width of a portion of the first gate structure overlapping the first active fin is greater than that of a portion of the second gate structure overlapping the second active fin.