The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Jun. 14, 2021
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Shiro Hino, Tokyo, JP;
Kotaro Kawahara, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 84/146 (2025.01); H10D 62/126 (2025.01); H10D 62/8325 (2025.01); H10D 64/62 (2025.01);
Abstract
A silicon carbide semiconductor device according to the present disclosure includes: an n-type drift layer on an n-type semiconductor substrate; p-type well regions in a surface layer of the drift layer; an n-type first separation region between the well regions; an n-type second separation region; an n-type source region in each of the well regions; a p-type contact region; an n-type current diffusion region in a surface layer of each of the well regions; a gate insulating film; a gate electrode; an ohmic electrode; a Schottky electrode on the first separation region.