The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Mar. 30, 2023
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventor:

Meng-Han Lin, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H10D 10/01 (2025.01); H10D 10/60 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 64/017 (2025.01); H10D 10/061 (2025.01); H10D 10/60 (2025.01); H10D 62/115 (2025.01);
Abstract

The present disclosure provides a semiconductor device and a method for forming the same. The semiconductor device includes a substrate including first to third active regions, a device isolation structure defining the first to third active regions in the substrate, first and second devices buried in the first and second active regions, respectively, a third device disposed on the third active region, an insulation layer disposed on the substrate and including a first portion covering the first device, a second portion covering the second device and a third portion surrounding a portion of the third device, and a first dummy gate structure disposed on the first active region and embedded in the first portion of the insulation layer. The horizontal area of the first portion is greater than the horizontal area of the third portion.


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