The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Jun. 09, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Takaaki Tominaga, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A SiC device includes an n-type semiconductor layer provided on a SiC substrate; a p-type first well region is provided in an upper layer part of the semiconductor layer; an n-type first impurity region is provided in an upper layer part of the first well region; a p-type first well contact region is provided in the upper layer part of the first well region and having a side surface joined to the first impurity region; a first contact electrically connected to the first impurity region and the first well contact region and electrically connected to a first main electrode provided over the semiconductor layer; a second well region separated from the first well region; a p-type second well contact region is provided in an upper layer part of the second well region; and a second contact electrically connected to the second well contact region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile