The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Jul. 07, 2025
Applicant:
Zinite Corporation, Edmonton, CA;
Inventors:
Assignee:
ZINITE CORPORATION, Edmonton, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/031 (2025.01); H10D 30/0314 (2025.01); H10D 30/6731 (2025.01); H10D 30/6737 (2025.01); H10D 30/6757 (2025.01);
Abstract
An example thin-film transistor includes a substrate, a source including a body of source material on the substrate, a drain including a body of drain material on the substrate, a body of channel material between the source and the drain, a body of gate dielectric material on the body of channel material, and a body of gate material on the body of gate dielectric material. The source material includes a metal nitride.
Barlage, Douglas. (2026). Thin-film transistors having a metal nitride source material and related methods (U.S. Patent No. 12672315). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672315
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile