The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Apr. 04, 2022
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Xiuling Li, Austin, TX (US);
Shaloo Rakheja, Champaign, IL (US);
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, Urbana, IL (US);
Abstract
A high electron mobility transistor (HEMT) for high frequency applications comprises: a source and a drain spaced apart on a substrate, each of the source and drain extending vertically away from the substrate; a stack of nanowire or nanosheet heterostructures suspended between the source and the drain and being vertically separated from each other, each of the nanowire or nanosheet heterostructures comprising a channel layer between top and bottom barrier layers; a gate dielectric layer on each nanowire or nanosheet heterostructure; and a gate electrode on each gate dielectric layer. Each of the channel layers comprises a first group III nitride including aluminum, and each of the top and bottom barrier layers comprises a second group III nitride including a higher amount of aluminum than the first group III nitride. The stack includes N of the nanowire or nanosheet heterostructures, where N is an integer from 2 to 50.