Scalable qubit biasing device based on multiplexed charge storage

Abstract

Embodiments including a semiconductor device circuit for biasing gates of a qubit device as well as a method for operating the device are disclosed. The embodiments may include a multiplexed array of capacitor cells, where each capacitor cell includes a transistor-controlled capacitor, where each capacitor is connected between a drain of a respective transistor and ground, where each source of all transistors of all capacitor cells are connected to a common control point, and where each gate of the transistors of the capacitor cells are individually voltage controllable. The embodiment may include a charging unit connected to the common control point, and a discharging unit connected to the common control point, where the charging unit and the discharging unit are alternatively activatable.