Tunable homojunction field effect device-based artificial synapse circuit and implementation method thereof

Abstract

A tunable homojunction field effect device-based artificial synapse circuit includes a first tunable homojunction field effect device M, a second tunable homojunction field effect device M, a third tunable homojunction field effect device M, and a capacitor C; the tunable homojunction field effect device can exhibit the electrical properties of NN junction, PP junction, PN junction, and NP junction under the control of gate voltage; in the circuit, whether the device Mand the device Mare turned on rely on the combined action of presynaptic pulse and postsynaptic pulse; compared with the circuit structure of a traditional CMOS circuit scheme which exhibits neural synaptic functions of spike-time-dependent plasticity and continuously adjustable pulse-to-synaptic weight, the circuit in the present solution requires a greatly reduced number of devices and shows the feature of reconfigurable function, exhibiting a great advantage in constructing low-power, high-density integrated bionic chips for future neuromorphic applications.