The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
May. 06, 2024
City University of Hong Kong, Kowloon, HK;
Shu Hung Henry Chung, Hong Kong, HK;
Ho Tin Tang, Tsuen Wan, HK;
CITY UNIVERSITY OF HONG KONG, Kowloon, HK;
Abstract
An apparatus for measuring a gate leakage current of a MOSFET. The apparatus includes a current mirror adapted to be connected to a gate of a MOSFET, a gate driver adapted to generate a driving signal for the MOSFET, and a sensing resistor connected to the current mirror. An input current path of the current mirror is adapted to receive a gate leakage current of the MOSFET. The current mirror provides a high sensitivity of the measurement because the voltage across the current mirror is nearly constant, which therefore caters for different situations no matter if the gate leakage current is high or low.