The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Oct. 21, 2022
Purdue Research Foundation, West Lafayette, IN (US);
Chi Hwan Lee, West Lafayette, IN (US);
Bongjoong Kim, West Lafayette, IN (US);
Zahyun Ku, Beavercreek, OH (US);
Augustine Urbas, Oakwood, OH (US);
Jehwan Hwang, West Lafayette, IN (US);
Abstract
Methods of fabricating infrared bandpass filters and infrared bandpass filters fabricated thereby. The methods include forming metallic and dielectric spacer layers on a mold that defines nanoscale-sized recesses or protuberances, depositing a stress-absorbing layer on the dielectric spacer layer opposite the mold, and applying a force to the stress-absorbing layer to peel a first intermediate structure comprising the metallic layer, the dielectric spacer layer, and the stress-absorbing layer from the mold. The stress-absorbing layer may be dissolved from the first intermediate structure with a solvent to define a second intermediate structure. The second intermediate structure may be transferred to a receiver substrate to define the IR bandpass filter. The recesses or protuberances of the metallic and dielectric spacer layers are configured to function as quasi-three-dimensional (quasi-3D) plasmonic metal-dielectric hybrid nanostructures.