The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Jan. 31, 2024
Applicant:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Inventors:

Xudong Fan, Saline, MI (US);

Anjali Devi Sivakumar, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61B 5/00 (2006.01); B01D 53/02 (2006.01); B01D 53/26 (2006.01);
U.S. Cl.
CPC ...
A61B 5/4266 (2013.01); A61B 5/681 (2013.01); B01D 53/02 (2013.01); B01D 53/266 (2013.01); A61B 2560/0252 (2013.01); A61B 2562/029 (2013.01); B01D 2257/702 (2013.01); B01D 2257/80 (2013.01);
Abstract

Transepidermal water loss (TEWL) measurement approach is presented that achieves accurate and continuous monitoring completely independent of ambient environmental variations. This new measurement approach uses short dry air purges to dry the skin surface and the water vapor collection chamber, thus refreshing the measurement site each time during skin barrier analysis. These dry air purges help maintain a highly controlled localized measuring environment without disturbing any inherent skin properties, enabling one to produce reproducible TEWL results. A mathematical model developed based on Fick's laws of diffusion is presented, and shown to have excellent agreement with the mathematical model of a commercial TEWL device. The application of this mathematical model in deciphering the TEWL values from the transient microclimate behavior in the vapor measuring chamber of the new TEWL approach is also discussed.


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