The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

May. 21, 2024
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tomoya Sanuki, Yokkaichi, JP;

Hiroshi Maejima, Tokyo, JP;

Tetsuaki Utsumi, Yokohama, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 46/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 46/00 (2026.01); H10W 90/20 (2026.01); H10W 90/284 (2026.01); H10W 90/792 (2026.01);
Abstract

According to one embodiment, a semiconductor memory device includes a memory cell, a first voltage generator and a second voltage generator. The memory cell is provided above a substrate. The first voltage generator is provided between the substrate and the memory cell. The first voltage generator is configured to generate a first voltage to be supplied to the memory cell. The second voltage generator is provided between the substrate and the memory cell. The second voltage generator is configured to generate the first voltage and have a circuit configuration equivalent to the first voltage generator.


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