The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Feb. 17, 2021
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kenji Fujii, Kyoto, JP;

Akinori Nii, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 70/40 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 72/90 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/421 (2026.01); H10W 70/424 (2026.01); H10W 74/111 (2026.01); H10W 70/435 (2026.01); H10W 70/438 (2026.01); H10W 70/464 (2026.01); H10W 70/465 (2026.01); H10W 72/07252 (2026.01); H10W 72/07253 (2026.01); H10W 72/227 (2026.01); H10W 72/228 (2026.01); H10W 72/231 (2026.01); H10W 72/234 (2026.01); H10W 72/252 (2026.01); H10W 72/923 (2026.01); H10W 72/952 (2026.01); H10W 90/724 (2026.01); H10W 90/811 (2026.01);
Abstract

A semiconductor device includes a conductor, a semiconductor element, and a bonding layer. The conductor has obverse surfaces and reverse surfaces facing away from each other in a thickness direction. The semiconductor element has a body layer and electrodes projecting toward the obverse surfaces from a side of the body layer that opposes the obverse surfaces in the thickness direction. The bonding layer bonds the obverse surfaces and the electrodes. Each electrode has a base portion in contact with the body layer and a columnar portion projecting from the base portion and in contact with the bonding layer. The electrodes include a first electrode and a second electrode located closer to the periphery of the body layer than is the first electrode as viewed in the thickness direction. The second electrode is larger in area of the columnar portion than the first electrode, as viewed in the thickness direction.


Find Patent Forward Citations

Fujii, Kenji. (2026). Semiconductor device (U.S. Patent No. 12666975). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666975

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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