The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

May. 25, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyeok Ahn, Suwon-si, KR;

Jinkuk Bae, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/43 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/46 (2026.01);
U.S. Cl.
CPC ...
H10W 20/43 (2026.01); H10W 20/056 (2026.01); H10W 20/072 (2026.01); H10W 20/075 (2026.01); H10W 20/425 (2026.01); H10W 20/46 (2026.01);
Abstract

A semiconductor device includes a first contact structure connected to the lower structure, a first conductive wiring connected to the first contact structure, a first etch-stop layer and an interlayer insulating layer sequentially provided on the first conductive wiring, a second contact structure passing through the first etch-stop layer, provided in the interlayer insulating layer, and connected to the first conductive wiring, a second conductive wiring provided on the second contact structure and provided in the interlayer insulating layer, a barrier layer including a first barrier portion on a bottom surface of the second contact structure, a second etch-stop layer provided on a top surface of the second conductive wiring and a top surface of the interlayer insulating layer, and an air gap between the barrier layer and the extension portion.


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