The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Aug. 09, 2023
Applicant:
Spts Technologies Limited, Newport, GB;
Inventors:
Matt Edmonds, Newport, GB;
William Royle, Newport, GB;
Caitlin Lane Jones, Newport, GB;
Daniel Gomez-Sanchez, Newport, GB;
Kathrine Crook, Newport, GB;
Assignee:
SPTS Technologies Limited, Newport, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 14/694 (2026.01); H10W 70/69 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6336 (2026.01); C23C 16/52 (2013.01); H01J 37/32165 (2013.01); H10P 14/6682 (2026.01); H10P 14/6686 (2026.01); H10P 14/69215 (2026.01); H10P 14/69433 (2026.01); H10W 70/69 (2026.01); H01J 2237/3321 (2013.01);
Abstract
Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be used to deposit silicon dioxide onto a substrate by plasma enhanced chemical vapour deposition.