The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jun. 30, 2022
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Tiaomei Zhang, Beijing, CN;

Tianyi Cheng, Beijing, CN;

Zhongliu Yang, Beijing, CN;

Zhiliang Jiang, Beijing, CN;

Ming Hu, Beijing, CN;

Haijun Qiu, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/131 (2023.01); G09G 3/3233 (2016.01); H10D 86/40 (2025.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10K 59/131 (2023.02); H10D 86/471 (2025.01); H10K 59/1213 (2023.02); G09G 3/3233 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01);
Abstract

A display panel includes a pixel driving circuit including a first type transistor and a second type transistor, the display panel further includes a base substrate, a first active layer located on a side of the base substrate, a second active layer located on the side of the first active layer away from the base substrate, a first conductive layer located between the first active layer and the second active layer; at least partial structure of the first active layer is used to form a channel region of the first type transistor; at least partial structure of the second active layer is used to form the channel region of the second type transistor; partial structure of the first conductive layer is used to form the gate of the first type transistor, partial structure of the first conductive layer is used to form the bottom gate of the second type transistor.


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