The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Mar. 22, 2023
Auo Corporation, Hsinchu, TW;
Yinyu Chen, Hsinchu, TW;
Yi-Hong Chen, Hsinchu, TW;
Chia-An Lee, Hsinchu, TW;
Yu-Hsin Huang, Hsinchu, TW;
Kuan-Heng Lin, Hsinchu, TW;
AUO Corporation, Hsinchu, TW;
Abstract
A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a multi-layer film. The second type semiconductor layer overlaps the first type semiconductor layer. The light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer and is located on a side of the first type semiconductor layer close to the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer and is located on a side of the second type semiconductor layer facing away from the first type semiconductor layer. The multi-layer film is located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer and has a protrusion portion. The protrusion portion protrudes from a side surface of the first type semiconductor layer. A light-emitting device includes the light-emitting element.