The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Feb. 19, 2021
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Makoto Ueno, Fukuoka, JP;

Kazuhiro Nishimura, Fukuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H03K 17/0812 (2006.01); H10D 8/25 (2025.01);
U.S. Cl.
CPC ...
H10D 89/611 (2025.01); H03K 17/08122 (2013.01); H10D 8/25 (2025.01); H03K 2217/0081 (2013.01);
Abstract

Provided is a semiconductor device that enables reliable screening to be performed in a short amount of time. The semiconductor device includes a switching element, a control circuit, a Zener diode, a first terminal, and a second terminal. The switching element, the control circuit, and the Zener diode are formed in the semiconductor substrate. The control circuit controls the state of the switching element. The Zener diode includes a cathode connected to the power supply voltage line between the input terminal where the power supply voltage for driving the control circuit is inputted and the control circuit. The first terminal is provided on a main surface of the semiconductor substrate as an anode of the Zener diode. The second terminal is provided on the main surface as one of the emitter and the source of the switching element, and is insulated from the first terminal within the semiconductor substrate.


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