The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jul. 12, 2024
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Guillaume Alexandre Blin, Carlisle, MA (US);

Aniruddha B. Joshi, Irvine, CA (US);

Christophe Masse, Andover, MA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/01 (2026.01); H03K 17/081 (2006.01); H10D 30/67 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 86/00 (2025.01); H10W 44/20 (2026.01); H10W 70/63 (2026.01); H10W 72/50 (2026.01); H10W 72/59 (2026.01); H10W 72/90 (2026.01); H10W 74/00 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 86/01 (2025.01); H03K 17/08104 (2013.01); H10D 30/6729 (2025.01); H10D 86/201 (2025.01); H10W 44/20 (2026.01); H10W 70/63 (2026.01); H10D 84/0142 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01); H10W 72/551 (2026.01); H10W 72/59 (2026.01); H10W 72/932 (2026.01); H10W 72/9445 (2026.01); H10W 74/00 (2026.01); H10W 74/114 (2026.01); H10W 90/754 (2026.01);
Abstract

Methods related to radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a method for fabricating an RF switching device can include: providing a semiconductor substrate; forming a plurality of field-effect transistors (FETs) on the semiconductor substrate such that the FETs have a non-uniform distribution of a parameter; and connecting the FETs to form a stack, such that the non-uniform distribution results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.


Find Patent Forward Citations

Loading…