The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Apr. 26, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An IGBT region () and a diode region () are provided on a semiconductor substrate () and have an emitter electrode () on a surface of the semiconductor substrate (). A sense IGBT region () is provided on the semiconductor substrate (), has a smaller area than that of the IGBT region (), and includes a sense emitter electrode () provided on the surface of the semiconductor substrate () and separated from the emitter electrode (). A sense diode region () is provided on the semiconductor substrate (), has a smaller area than that of the diode region (), and includes a sense anode electrode provided on the surface of the semiconductor substrate () and separated from the emitter electrode (). The sense diode region () is separated from the IGBT region () by a distance equal to or greater than that of the drift layer ().