The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Nov. 20, 2023
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takahiro Maruyama, Tokyo, JP;

Toshiya Saito, Tokyo, JP;

Takuya Maruyama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01);
Abstract

A first conductive pattern is formed on a semiconductor substrate and formed from a first conductive film. A second conductive film having a first portion on the semiconductor substrate, a second portion on an upper surface of the first conductive pattern, and a third portion connecting the first portion and the second portion so as to cover a side surface of the first conductive pattern, is formed. The upper surface of the third portion is higher than the upper surface of the first portion. The second portion is patterned. The second portion and a part of the third portion are selectively removed. By patterning the first conductive pattern and the second conductive film, a first gate electrode is formed from a part of the first conductive pattern, and a second gate electrode is formed from a part of the first portion.


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