Wide bandgap material in drift well of semiconductor device

Abstract

The present disclosure generally relates to semiconductor devices including a material having a wide bandgap energy, or simply bandgap, located in a drift well of the semiconductor device. In an example, a semiconductor device includes a laterally-diffused metal-oxide-semiconductor (LDMOS) transistor. The LDMOS transistor includes a drain region, a source region, and a drift well. The drain region is disposed in a semiconductor material of a semiconductor substrate. The source region is disposed in the semiconductor material of the semiconductor substrate. The drift well is disposed laterally between the drain region and the source region. The drift well includes a wide bandgap material, and the wide bandgap material has a bandgap energy that is larger than a bandgap energy of the semiconductor material of the semiconductor substrate.