The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
May. 31, 2022
Mqsemi Ag, Zug, CH;
Munaf Rahimo, Gaensbrunnen, CH;
Iulian Nistor, Niederweningen, CH;
MQSEMI AG, Zug, CH;
Abstract
A Metal Oxide Semiconductor (MOS) transistor cell design has multiple trench recesses embedding trench gate electrodes longitudinally extending in a third dimension, with interconnected first base layer, source regions, and a second base layer covering portions of the regions between adjacent trench recesses and longitudinally extending in the same third dimension. When a control voltage greater than a threshold value is applied on the trench gate electrodes, no vertical MOS channels are formable on the trench walls because each of trench recesses abuts at least one source regions and a connected highly doped second base layer. Instead, the charge carriers flow from a singular point within the source region, into a radial MOS channel formed only on the lateral walls of those trench regions abutting the first base layer, but not the higher doped second base layer.