The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jun. 01, 2023
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Yu-Chun Li, New Taipei City, TW;

Thomas S. Chung, Merrimack, NH (US);

Maxim Klebanov, Palm Coast, FL (US);

Chung C. Kuo, Manchester, NH (US);

James M. Mcclay, Dudley, MA (US);

Robert A. Wilson, Charlton, MA (US);

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/01 (2025.01); H10D 62/13 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/65 (2025.01); H10D 30/0281 (2025.01); H10D 62/152 (2025.01); H10D 64/112 (2025.01); H10D 64/117 (2025.01); H10D 64/513 (2025.01);
Abstract

According to one aspect of the present disclosure, a semiconductor device includes a substrate having a first type dopant. In some embodiments, the semiconductor device also includes an epitaxial layer above the substrate, having a second type dopant and a top region. In some embodiments, the semiconductor device also includes a trench in the top region of the epitaxial layer; at least one doped ring implanted in the epitaxial layer below the trench; and a dielectric material filling within the trench. In some embodiments, there is a twelve-sided body tie in the epitaxial layer, wherein the sides of the twelve-sided body tie are not all equal to each other.


Find Patent Forward Citations

Li, Yu-Chun. (2026). Method to implant p-type and/or n-type rings in a semiconductor device (U.S. Patent No. 12666643). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666643

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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