The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jul. 28, 2023
Applicant:

Avago Technologies International Sales Pte. Limited, Singapore, SG;

Inventor:

Qing Liu, Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 62/371 (2025.01);
Abstract

A gate all-around laterally diffused metal-oxide semiconductor device is provided. An apparatus includes a substrate, two or more first sheets disposed on the substrate, a gate disposed on the substrate and at least part of the two or more first sheets, and a first epitaxial layer disposed on the substrate on a first side of the gate and at least part of the two or more first sheets. At least part of the two or first more sheets extends longitudinally from the gate to the first epitaxial layer.


Find Patent Forward Citations

Liu, Qing. (2026). Gate all-around laterally diffused metal-oxide semiconductor field effect transistor (U.S. Patent No. 12666639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666639

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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