The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Apr. 09, 2023
Applicant:

Marvell Asia Pte Ltd, Singapore, SG;

Inventor:

Runzi Chang, Saratoga, CA (US);

Assignee:

Marvell Asia Pte Ltd, Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/014 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/122 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01); H10D 84/856 (2025.01); H10D 88/01 (2025.01); H10W 20/427 (2026.01);
Abstract

A semiconductor device, includes: (a) a substrate, (b) a gate electrode, disposed on a surface of the substrate, and including a plate, orthogonal to the surface, and having openings, a longest axis of the openings is orthogonal to the surface, and (c) elements having a shape that fits in the openings, the elements (i) are orthogonal both to the surface and to the gate electrode, (ii) extend through the openings, and (iii) are surrounded by the gate electrode and spaced away from the surface, the elements including: a first section that is located on a first side of the gate electrode and serves as a source; and a second section that is located on a second side of the gate electrode and serves as a drain, the gate electrode configured to control movement of charge carriers between the source and the drain in response to an applied electrical signal.


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