The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Mar. 15, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shin-Hung Tsai, Hsinchu, TW;
Chun-Hsiu Chiang, Taipei City, TW;
Cheng-Hao Hou, Hsinchu, TW;
Da-Yuan Lee, Jhubei City, TW;
Chi On Chui, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a first electrode, and depositing a dielectric layer over the first electrode. The dielectric layer has a first dielectric constant and a first thickness. A dielectric capping layer is deposited over the dielectric layer. The dielectric capping layer has a second dielectric constant higher than the first dielectric constant, and a second thickness smaller than the first thickness. The method further includes forming a second electrode over the dielectric capping layer, forming a first contact plug electrically connecting to the first electrode, and forming a second contact plug electrically connecting to the second electrode.