The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Mar. 07, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Kensuke Takahashi, Yokkaichi Mie, JP;

Daisaburo Takashima, Yokohama Kanagawa, JP;

Naoki Kai, Kuwana Mie, JP;

Yasumi Ishimoto, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 63/10 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); H10B 63/10 (2023.02); H10B 63/34 (2023.02);
Abstract

According to one embodiment, a cell block includes memory cells and select transistors. The memory cells correspond are connected in parallel between a local source line and a local bit line. The select transistor is connected between the local bit line and a bit line. The memory cell includes a cell transistor and a resistance change element. A gate of the cell transistor is connected to a word line. The resistance change element is connected to the cell transistor in series between the local source line and the local bit line. Each cell block is configured as a columnar structure penetrating a plurality of conductive films functioning as word lines. The select transistor and the local bit line are connected at a contact portion formed of a material different from a material of the local bit line.


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