Non-volatile memory device and system including the same

Abstract

A non-volatile memory device includes a substrate; an insulating layer on the substrate; a bit line isolation layer on the insulating layer; a common source line conductive layer on the bit line isolation layer; a ferroelectric memory cell on the bit line isolation layer; a bit line connected to a top of the ferroelectric memory cell; and a common source line connected to the common source line conductive layer and electrically connected to the ferroelectric memory cell, wherein the ferroelectric memory cell includes a ferroelectric layer, a channel layer, a first conductive filler connected to the ferroelectric layer and the channel layer and extending in a vertical direction, and a second conductive filler connected to the ferroelectric layer and the channel layer and extending in the vertical direction, the first conductive filler is connected to the bit line, and the second conductive filler is connected to the common source line.