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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12666620 B1

PDFFull Text
Date of Patent:
Jun. 23, 2026

Filed:

Aug. 29, 2023

Semiconductor device and manufacturing method of a semiconductor device

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Seok Min Choi, Gyeonggi-do, KR;

Jung Shik Jang, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T GROUP LLP

Primary Examiner:

Vu A Vu

Int. Cl.
CPC ...
H01L 21/77 (2017.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor device may include: a plurality of word lines; a select line; a channel layer extending into the select line through the word lines; a floating gate surrounding sidewalls of the channel layer between the channel layer and the select line; and a charge trap layer including a first and a second portion, wherein the first portion surrounds the sidewalls of the channel layer between the channel layer and the word lines and the second portion surrounds the floating gate between the channel layer and the select line.

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Choi, Seok. (2026). Semiconductor device and manufacturing method of a semiconductor device (U.S. Patent No. 12666620). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666620

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