The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jan. 16, 2024
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Tatsuya Hinoue, Yokkaichi, JP;
Makoto Koto, Yokkaichi, JP;
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10D 64/64 (2025.01);
Abstract
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located on a semiconductor layer, a memory opening vertically extending through the alternating stack and the semiconductor layer, a memory opening fill structure located in the memory opening and containing a memory film and a vertical semiconductor channel, and a source layer that is formed at the bottom end of a vertical semiconductor channel. The source layer may comprise at least one metal that provides a Schottky contact to the vertical semiconductor channel.