The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jan. 12, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Young Geun Jang, Hwaseong-si, KR;

Wan Sup Shin, Seongnam-si, KR;

Ki Hong Lee, Suwon-si, KR;

Jae Jung Lee, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10P 50/00 (2026.01); H10W 20/00 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02); H10D 30/694 (2025.01); H10D 64/037 (2025.01); H10P 50/73 (2026.01); H10W 20/069 (2026.01); H10W 20/42 (2026.01);
Abstract

A semiconductor device includes a first stack structure including first interlayer insulating layers and first conductive patterns alternately stacked on each other in a first direction and a second conductive pattern comprising electrode portions and a connecting portion. The electrode portions of the second conductive pattern are stacked to be spaced apart from each other above the first stack structure. The connecting portion of the second conductive pattern extends in the first direction to intersect the electrode portions and couples the electrode portions. The semiconductor device further includes a vertical channel and a vertical conductive structure that pass through the first stack structure and the electrode portions of the second conductive pattern. The vertical conductive structure is spaced apart from the first stack structure and the second conductive pattern.


Find Patent Forward Citations

Jang, Young. (2026). Semiconductor device (U.S. Patent No. 12666615). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12666615

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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