The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jun. 06, 2024
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Franck Melul, Aubagne, FR;

Abderrezak Marzaki, Cabries, FR;

Madjid Akbal, Trets, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/35 (2023.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); H10B 41/10 (2023.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 41/35 (2023.02); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/34 (2013.01); H10D 30/0411 (2025.01); H10D 30/684 (2025.01); H10B 41/10 (2023.02); H10D 30/683 (2025.01); H10D 64/035 (2025.01);
Abstract

In an embodiment a memory cell includes a first doped well of a first conductivity type embedded in a second doped well of a second conductivity type, the second conductivity type being opposite to the first conductivity type, a third doped well of the second conductivity type embedded in a fourth doped well of the first conductivity type, a first wall in contact with the second and fourth doped wells, the first wall including a conductive or semiconductor core and an insulating liner, the insulating liner extending between the conductive or semiconductor core and the second and fourth doped wells, and a stack of layers comprising a first insulating layer, a first semiconductor layer, a second insulating layer and a second semiconductor layer, the first insulating layer being in contact with the second and fourth doped wells.


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