The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Jul. 05, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Junhyeok Ahn, Suwon-si, KR;
Myeongdong Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device may include a device isolation layer on a substrate and defining an active region; and a word line structure in a gate trench defined by the device isolation layer and the active region. The word line structure may include a word line on a gate dielectric layer. The word line may include a second material layer including a doped semiconductor material on a first material layer, may have a first region having a first width and a second region having a second width, which may be wider than the first width. The second material layer may include a first material portion in the first region and a second material portion in the second region. The doped semiconductor material may be a first concentration in the first material portion and a second concentration in the second material portion, which may be lower than the first concentration.