The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jul. 20, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hoju Song, Suwon-si, KR;

Eunjung Kim, Suwon-si, KR;

Kihyung Nam, Suwon-si, KR;

Jaehyung Park, Suwon-si, KR;

Yunjae Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/09 (2023.02); H10B 12/315 (2023.02); H10B 12/50 (2023.02);
Abstract

A method of manufacturing a semiconductor device may include forming word lines in word line trenches on a substrate, removing a portion of the substrate located between a pair of the word lines to form a direct contact hole, forming on an inner wall of the direct contact hole a sacrificial liner structure that includes a first liner, a sacrificial layer, and a second liner, forming a preliminary direct contact in the direct contact hole, removing the sacrificial layer, while leaving the first and second liners, to form an air space between the first and second liners, forming a bit line stack that covers an upper surface the air space on the preliminary direct contact, patterning the bit line stack to form bit lines, and removing side portions of the second liner and the preliminary direct contact in the direct contact hole to form a direct contact.


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