The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Dec. 04, 2023
Infineon Technologies Ag, Neubiberg, DE;
Christian Djelassi-Tscheck, Villach, AT;
Alexander Mayer, Treffen, AT;
Mario Tripolt, Ferndorf, AT;
Vincent Thiery, Aix En Provence, FR;
Markus Huebl, Villach, AT;
Bernhard Auer, Millstatt, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A current limitation concept for an intelligent semiconductor switch is described herein. In accordance with one embodiment, a method performed by the intelligent semiconductor switch comprises generating a gate current and switching on a power transistor by applying the gate current to the gate electrode of the power transistor. The method further comprises determining information regarding a load current passing through the power transistor and controlling—based on the information regarding the load current—the load current by reducing the gate current applied to the gate electrode of the power transistor. When the load current exceeds a first threshold value, the gate current is reduced by a specific amount, and when the load current exceeds a third threshold value, the gate current is further reduced by sinking a discharge current, which has a third current level, from the gate electrode of the power transistor.