The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2026
Filed:
Sep. 15, 2023
Applicant:
Ngk Insulators, Ltd., Nagoya-City, JP;
Inventor:
Yusuke Ogiso, Nagakute-City, JP;
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02N 13/00 (2006.01); B23K 26/352 (2014.01); C04B 35/581 (2006.01); C04B 41/00 (2006.01); C04B 41/53 (2006.01);
U.S. Cl.
CPC ...
H02N 13/00 (2013.01); B23K 26/352 (2015.10); C04B 35/581 (2013.01); C04B 41/0036 (2013.01); C04B 41/5346 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3865 (2013.01);
Abstract
A member for semiconductor manufacturing apparatus of the present invention includes an AlN ceramic substrate with a surface provided with projections for wafer placement. At least part of an area, provided with no projection, of the AlN ceramic substrate has a surface layer region from the surface to a predetermined depth, and a base material region below the surface layer region. The predetermined depth is 5 μm or less. The oxygen content rate of the surface layer region is higher than the oxygen content rate of the base material region.