The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Aug. 09, 2024
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Maryse Fournier, Grenoble cedex, FR;

Badhise Ben Bakir, Grenoble cedex, FR;

Sergio Nicoletti, Grenoble cedex, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/02 (2006.01); H01S 5/12 (2021.01); H01S 5/227 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3402 (2013.01); H01S 5/021 (2013.01); H01S 5/12 (2013.01); H01S 5/2275 (2013.01); H01S 5/4087 (2013.01);
Abstract

A method for manufacturing a first optoelectronic device operating at a wavelength λand a second optoelectronic device operating at a wavelength λ, the first device comprising a first stack comprising a first encapsulation layer of thickness eand layers of thickness e(i=1 . . . n), and the second device comprising a second stack comprising a second encapsulation layer of thickness eand layers of thickness e(i=1 . . . n). The method includes forming the second stack by sizing the thicknesses eand eaccording to λ, forming the first stack by sizing the thicknesses eby homothety and adjusting the thickness esuch that the stacks have the same height, and performing out one same technological step on the stacks.


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